sud50p04-15 vishay siliconix new product document number: 71176 s-00830erev. a, 24-apr-00 www.vishay.com faxback 408-970-5600 1 p-channel 40-v (d-s), 175 c mosfet
v ds (v) r ds(on) ( ) i d (a) 40 0.015 @ v gs = 10 v 50 40 0.023 @ v gs = 4.5 v 45 to-252 s gd top view drain connected to tab order number: sud50p04-15 s g d p-channel mosfet
parameter symbol limit unit drain-source voltage v ds 40 v gate-source voltage v gs 20 v continuous drain current b t c = 25 c i d 50 a continuous drain current b t c = 100 c i d 40 a pulsed drain current i dm 150 a continuous source current (diode conduction) i s 50 maximum power dissipation b t c = 25 c p d 100 b w maximum power dissipation b t a = 25 c p d 3 a w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol typical maximum unit maximum junction - to - ambient a t 10 sec. r thja 15 18 c/w m ax i mum j unc ti on- t o- a m bi en t a steady state r thja 40 50 c/w maximum junction-to-case r thjc 1.2 1.5 notes a. surface mounted on 1o x 1o fr4 board. b. see soa curve for voltage derating.
sud50p04-15 vishay siliconix new product www.vishay.com faxback 408-970-5600 2 document number: 71176 s-00830erev. a, 24-apr-00
parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 40 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 40 v, v gs = 0 v 1 a zero gate v oltage drain current i dss v ds = 40 v, v gs = 0 v, t j = 125 c 50 a on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 120 a dis os r i a v gs = 10 v, i d = 30 a 0.012 0.015 drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 30 a, t j = 125 c 0.024 v gs = 4.5 v, i d = 20 a 0.018 0.023 forward transconductance a g fs v ds = 15 v, i d = 30 a 20 s dynamic b input capacitance c iss 5400 f output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 640 pf reverse transfer capacitance c rss 300 total gate charge c q g v20vv10vi50a 85 130 c gate-source charge c q gs v ds = 20 v, v gs = 10 v, i d = 50 a 25 nc gate-drain charge c q gd 15 turn-on delay time c t d(on) v20vr04 15 25 rise time c t r v dd = 20 v, r l = 0.4 i50av 10vr25 380 580 ns turn-off delay time c t d(off) dd , l i d 50 a, v gen = 10 v, r g = 2.5 75 115 ns fall time c t f 140 210 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 150 a diode forward voltage a v sd i f = 50 a, v gs = 0 v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 40 80 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. c. independent of operating temperature.
sud50p04-15 vishay siliconix new product document number: 71176 s-00830erev. a, 24-apr-00 www.vishay.com faxback 408-970-5600 3
0 20 40 60 80 0 20406080100 0 2000 4000 6000 8000 0 5 10 15 20 25 30 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds drain-to-source voltage (v) drain current (a) i d v gs gate-to-source voltage (v) drain current (a) i d gate-to-source voltage (v) on-resistance ( q g total gate charge (nc) i d drain current (a) v ds drain-to-source voltage (v) c capacitance (pf) r ds(on) w ) v gs transconductance (s) g fs 0 50 100 150 200 250 0246810 0 4 8 12 16 20 0 40 80 120 160 0 0.01 0.02 0.03 0.04 0 20406080100120 0 20 40 60 80 100 0123456 25 c 125 c 5 v t c = 55 c v ds = 20 v i d = 50 a v gs = 10, 9, 8 v 6 v v gs = 10 v v gs = 4.5 v t c = 55 c 25 c 125 c 2, 3 v c oss c iss i d drain current (a) 4 v 7 v c rss
sud50p04-15 vishay siliconix new product www.vishay.com faxback 408-970-5600 4 document number: 71176 s-00830erev. a, 24-apr-00
on-resistance vs. junction temperature source-drain diode forward voltage (normalized) on-resistance ( t j junction temperature ( c) v sd source-to-drain voltage (v) r ds(on) w ) source current (a) i s 0 0.5 1.0 1.5 2.0 2.5 50 25 0 25 50 75 100 125 150 175 100 10 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 30 a t j = 25 c t j = 150 c 0
0 10 20 30 40 50 60 0 25 50 75 100 125 150 175 safe operating area v ds drain-to-source voltage (v) drain current (a) i d 500 10 0.1 0.1 1 10 100 limited by r ds(on) 1 100 t c = 25 c single pulse normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 4 10 3 10 2 10 1 110 normalized effective transient thermal impedance maximum drain current vs. case temperature t c case temperature ( c) drain current (a) i d 0.2 0.1 0.05 single pulse duty cycle = 0.5 1 ms 10 ms 100 ms dc 10 s 30 100 s 1. duty cycle, d = 2. per unit base = r thja = 40 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.02
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